Datasheet4U Logo Datasheet4U.com

VSD007N07MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Technology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VSD007N07MS 70V/65A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 70 V 6.3 mΩ 7.5 mΩ 65 A TO-252 Part ID VSD007N07MS Package Type TO-252 Marking 007N07M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise speci.

📥 Download Datasheet

Datasheet Details

Part number VSD007N07MS
Manufacturer Vanguard Semiconductor
File Size 348.09 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSD007N07MS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VSD025N10MS N-Channel 100V MOSFET VBsemi

Other Datasheets by Vanguard Semiconductor

Part Number Description
VSD007N04MS N-Channel Advanced Power MOSFET
VSD007N06MS N-Channel Advanced Power MOSFET
VSD007NE4MS N-Channel Advanced Power MOSFET
VSD007P06MS P-Channel Advanced Power MOSFET
VSD003N06HS N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD007N07MS 70V/65A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 70 V 6.3 mΩ 7.5 mΩ 65 A TO-252 Part ID VSD007N07MS Package Type TO-252 Marking 007N07M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C ID=15A IAS Avalanche current L=0.
Published: |