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VSD006N08MS - N-Channel Advanced Power MOSFET

Features

  • N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VSD006N08MS 80V/85A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 80 V 5.8 mΩ 7.0 mΩ 85 A TO-252 Part ID VSD006N08MS Package Type TO-252 Marking 006N08M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V.

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Datasheet Details

Part number VSD006N08MS
Manufacturer Vanguard Semiconductor
File Size 329.69 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSD006N08MS Datasheet

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD006N08MS 80V/85A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 80 V 5.8 mΩ 7.0 mΩ 85 A TO-252 Part ID VSD006N08MS Package Type TO-252 Marking 006N08M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C ID=18A IAS Avalanche current max L=0.
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