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VSA007N02KD - Dual N-Channel Advanced Power MOSFET

Features

  • Dual N-Channel，2.5V Logic Level Control.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=2.5V.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant V DS 20 V R @DS(on),TYP VGS=4.5V R @DS(on),TYP VGS=2.5V 7.4 mΩ 9.4 mΩ I D 13 A TDFN2x3-6L Part ID VSA007N02KD Package Type TDFN2x3-6L Marking 7N02 Tape and reel information 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage.

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Datasheet Details

Part number VSA007N02KD
Manufacturer Vanguard Semiconductor
File Size 597.93 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VSA007N02KD Datasheet

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Full PDF Text Transcription

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VSA007N02KD 20V/13A Common-Drain Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel，2.5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=2.5V  100% Avalanche Tested  Pb-free lead plating; RoHS compliant V DS 20 V R @DS(on),TYP VGS=4.5V R @DS(on),TYP VGS=2.5V 7.4 mΩ 9.
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