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VS8810DTS - Dual N-Channel Advanced Power MOSFET

Features

  • Dual N-Channel，2.5V Logic Level Control.
  • Low on-resistance RDS(on) @ VGS=2.5 V.
  • Fast Switching.
  • ESD Protection HBM 2.5KV.
  • Pb-free lead plating; RoHS compliant V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 19 mΩ 26 mΩ 7A TSSOP8 Part ID VS8810DTS Package Type TSSOP8 Marking 8810D Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode contin.

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Datasheet Details

Part number VS8810DTS
Manufacturer Vanguard Semiconductor
File Size 593.60 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VS8810DTS Datasheet

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Full PDF Text Transcription

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VS8810DTS 20V/7A Common-Drain Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel，2.5V Logic Level Control  Low on-resistance RDS(on) @ VGS=2.5 V  Fast Switching  ESD Protection HBM 2.5KV  Pb-free lead plating; RoHS compliant V DS R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 19 mΩ 26 mΩ 7A TSSOP8 Part ID VS8810DTS Package Type TSSOP8 Marking 8810D Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=4.
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