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VS4407AS - P-Channel Advanced Power MOSFET

Description

VS4407AS designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant VS4407AS -30V/-13A P-Channel Advanced Power MOSFET V DS R DS(on),typ @ VGS= -10V R DS(on),typ @ VGS= -4.5V ID -30 V 11 mΩ 15 mΩ -13 A.

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Datasheet Details

Part number VS4407AS
Manufacturer Vanguard Semiconductor
File Size 283.66 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS4407AS Datasheet

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Full PDF Text Transcription

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Features Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant VS4407AS -30V/-13A P-Channel Advanced Power MOSFET V DS R DS(on),typ @ VGS= -10V R DS(on),typ @ VGS= -4.5V ID -30 V 11 mΩ 15 mΩ -13 A Description VS4407AS designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
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