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VS3628DB - N-Channel Advanced Power MOSFET

Features

  • Dual Asymmetric N-Channel.
  • High Current Capability.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • Low Gate Charge.
  • Pb-free lead plating; RoHS compliant V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 30 30 V 14 6 mΩ 23 9 mΩ 20 40 A DFN3x3 Part ID VS3628DB Package Type DFN3x3 Marking 3628DB Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Q1 Q2 V(BR)DSS Drain-Source breakdown voltage 30 30.

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Datasheet Details

Part number VS3628DB
Manufacturer Vanguard Semiconductor
File Size 808.09 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3628DB Datasheet

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Full PDF Text Transcription

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VS3628DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET Features  Dual Asymmetric N-Channel  High Current Capability  Low on-resistance RDS(on) @ VGS=4.5 V  Low Gate Charge  Pb-free lead plating; RoHS compliant V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
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