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VS3625DB - 30V Dual Asymmetric N-Channel Advanced Power MOSFET

Key Features

  • Dual Asymmetric N-Channel.
  • VitoMOS® Ⅱ Technology.
  • 100% Avalanche Tested,100% Rg Tested V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5V I D(Wire bond Limited) 30 30 V 6.6 4.5 mΩ 10 7 mΩ 24 36 A DFN3x3 Part ID VS3625DB Package Type DFN3x3 Marking 3625DB Packing 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Q1 Q2 V(BR)DSS Drain-Source breakdown voltage 30 30 VGS Gate-Source voltage ±20 ±20 IS Diode c.

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Datasheet Details

Part number VS3625DB
Manufacturer Vanguard Semiconductor
File Size 1.02 MB
Description 30V Dual Asymmetric N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3625DB Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VS3625DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET Features  Dual Asymmetric N-Channel  VitoMOS® Ⅱ Technology  100% Avalanche Tested,100% Rg Tested V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5V I D(Wire bond Limited) 30 30 V 6.6 4.5 mΩ 10 7 mΩ 24 36 A DFN3x3 Part ID VS3625DB Package Type DFN3x3 Marking 3625DB Packing 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Q1 Q2 V(BR)DSS Drain-Source breakdown voltage 30 30 VGS Gate-Source voltage ±20 ±20 IS Diode continuous forward current TC =25°C 8.