VS2518AS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - High conversion efficiency - Pb-free lead plating; Ro HS pliant 20V/18A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 20 V 4.5 mΩ 18 A SOP8 Part ID VS2518AS Package Type SOP8 Marking 2518AS Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient TC =25°C TC =25°C TA =70°C TC =25°C TA =25°C Rating 20 18 18 13.5 72 2 ±12 -55 to 175 Typical 1.6 62.5 Unit V A A A A W V °C Unit °C/W...