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VG26VS17405FJ - 4/194/304 x 4 - Bit CMOS Dynamic RAM

Description

The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode.

It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply.

Features

  • Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply.
  • High speed t RAC acess time: 50/60ns.
  • Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas).
  • Extended - data - out(EDO) page mode access.
  • I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
  • 2048 refresh cycle in 32 ms(Std. ) or 128 ms(S-version).
  • 4 refr.

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Datasheet Details

Part number VG26VS17405FJ
Manufacturer Vanguard International Semiconductor
File Size 244.81 KB
Description 4/194/304 x 4 - Bit CMOS Dynamic RAM
Datasheet download datasheet VG26VS17405FJ Datasheet

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VIS Description VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ. Features • Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply • High speed t RAC acess time: 50/60ns • Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.
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