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VG26S17400FJ - CMOS DRAM

Download the VG26S17400FJ datasheet PDF. This datasheet also covers the VG2617400FJ variant, as both devices belong to the same cmos dram family and are provided as variant models within a single manufacturer datasheet.

Description

or 3.3V only power supply.

The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits.

Features

  • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply.
  • High speed tRAC access time : 50/60 ns.
  • Low power dissipation - Active mode : 5V version 605/550 mW (Max. ) 3.3V version 396/360 mW (Max. ) - Standby mode : 5V version 1.375 mW (Max. ) 3.3V version 0.54 mW (Max. ).
  • Fast Page Mode access.
  • I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
  • 2048 refresh cycles in 32 ms (Std) or 128ms (S - version).
  • 4 refresh mode :.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VG2617400FJ_VanguardInternationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VG26S17400FJ
Manufacturer Vanguard International Semiconductor
File Size 514.57 KB
Description CMOS DRAM
Datasheet download datasheet VG26S17400FJ Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com VIS Description or 3.3V only power supply. Low voltage operation is more suitable to be used on battery VG26(V)(S)17400FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II). Features • Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply • High speed tRAC access time : 50/60 ns • Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.
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