SI7136DP - N-Channel 20-V (D-S) MOSFET

Datasheet Summary

Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive.

Vaishali Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	SI7136DP
Manufacturer	Vaishali Semiconductor
File Size	312.49 KB
Description	N-Channel 20-V (D-S) MOSFET
Datasheet	SI7136DP Datasheet
Additional preview pages of the SI7136DP datasheet.

📁 Similar Datasheet

SI7136DP-RC - R-C Thermal Model Parameters (Vishay Siliconix)
SI7137DP - P-Channel MOSFET (Vishay Siliconix)
SI7102DN - N-Channel MOSFET (Vishay Siliconix)
SI7106DN - N-Channel MOSFET (Vishay Siliconix)
SI7108DN - N-Channel MOSFET (Vishay Siliconix)
Si7110DN - N-Channel 20-V (D-S) Fast Switching MOSFET (Vishay)
Si7111EDN - P-Channel 30 V (D-S) MOSFET (Vishay)
SI7112DN - N-Channel 30 V (D-S) Fast Switching MOSFET (Vishay)
SI7113DN - P-Channel MOSFET (Vishay Siliconix)
SI7114ADN - N-Channel MOSFET (Vishay Siliconix)

Other Datasheets by Vaishali Semiconductor

SI7114DN - N-Channel 30-V (D-S) Fast Switching MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com SPICE Device Model Si7136DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Published: Feb 17, 2007 |