SI5484DU-RC - R-C Thermal Model Parameters

Description

The parametric values in the R-C thermal model have been derived using curve-fitting techniques.

These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Vaishali Semiconductor

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Datasheet Details

Part number	SI5484DU-RC
Manufacturer	Vaishali Semiconductor
File Size	229.71 KB
Description	R-C Thermal Model Parameters
Datasheet	SI5484DU-RC Datasheet
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www.DataSheet4U.com Si5484DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.

Published: Mar 13, 2007 |