VSM50N15
Description
The VSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
VSM50N15-TC
Shenzhen VSEEI Semiconductor Co., Ltd
TO-220C
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
VSM50N15-TC
TO-220C
Reel Size
- Tape width
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃...
