VSM120N04-T1
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Product Summary
VDSS RDS(on).max@ VGS=10V ID
Pin Configuration
40V 3.5mΩ 120A
Features
- 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green device available
TO-252
TO-251
Applications
- Motor Drives
- UPS
- DC-DC Converter
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Continuous drain current ( TC = 25°C )1) ID
Continuous drain current ( TC = 100°C )1)
Pulsed drain current2)
Gate-Source voltage
VGSS
Avalanche energy3)
Power Dissipation ( TC = 25°C )
Storage...
