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JANKCE2N5152 - NPN Power Silicon Transistor

Download the JANKCE2N5152 datasheet PDF. This datasheet also covers the JANHCE2N5152 variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in commercial JANHCE and JANKCE MIL-PRF19500/544.
  • Rad Tolerant to 100K rads (Si).
  • Ideal for High Current Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JANHCE2N5152-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JANKCE2N5152
Manufacturer VPT
File Size 375.51 KB
Description NPN Power Silicon Transistor
Datasheet download datasheet JANKCE2N5152 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
JANHCE2N5152, JANHCE2N5154 JANKCE2N5152, JANHCE2N5154 NPN Power Silicon Transistor Die Features • Available in commercial JANHCE and JANKCE MIL-PRF19500/544 • Rad Tolerant to 100K rads (Si) • Ideal for High Current Switching Applications Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage IC = 100 mA dc, IB = 0 V(BR)CEO V dc 80 Emitter - Base Cutoff Current Collector - Emitter Cutoff Current VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 V dc, VBE = 0 VCE = 100 V dc, VBE = 0 IEBO1 µA dc IEBO2 mA dc — ICES1 µA dc ICES2 mA dc — Collector - Emitter Cutoff Current VCE = 40 Vdc, IB = 0 ICEO µA dc — Forward Current Transfer Ratio IC = 50 mA dc, VCE = 5.