Datasheet4U Logo Datasheet4U.com

JANHCE2N5154 - NPN Power Silicon Transistor

Download the JANHCE2N5154 datasheet PDF. This datasheet also covers the JANHCE2N5152 variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in commercial JANHCE and JANKCE MIL-PRF19500/544.
  • Rad Tolerant to 100K rads (Si).
  • Ideal for High Current Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JANHCE2N5152-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JANHCE2N5154
Manufacturer VPT
File Size 375.51 KB
Description NPN Power Silicon Transistor
Datasheet download datasheet JANHCE2N5154 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
JAN1N6392 Schottky Rectifier International Rectifier
JAN2N1711 NPN LOW POWER SILICON TRANSISTOR Microsemi Corporation
JAN2N2060 UNITIZED DUAL NPN SILICON TRANSISTOR Microsemi
JAN2N2060L UNITIZED DUAL NPN SILICON TRANSISTOR Microsemi
JAN2N2221A NPN SILICON SWITCHING TRANSISTOR Microsemi

Other Datasheets by VPT

Part Number Description
JANHCE2N5154 NPN Power Silicon Transistor
JANHCE2N5152 NPN Power Silicon Transistor
JANHCA1N6638 Silicon Switching Diode
JANHCA1N6642 Silicon Switching Diode
JANHCA1N6643 Silicon Switching Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
JANHCE2N5152, JANHCE2N5154 JANKCE2N5152, JANHCE2N5154 NPN Power Silicon Transistor Die Features • Available in commercial JANHCE and JANKCE MIL-PRF19500/544 • Rad Tolerant to 100K rads (Si) • Ideal for High Current Switching Applications Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage IC = 100 mA dc, IB = 0 V(BR)CEO V dc 80 Emitter - Base Cutoff Current Collector - Emitter Cutoff Current VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 V dc, VBE = 0 VCE = 100 V dc, VBE = 0 IEBO1 µA dc IEBO2 mA dc — ICES1 µA dc ICES2 mA dc — Collector - Emitter Cutoff Current VCE = 40 Vdc, IB = 0 ICEO µA dc — Forward Current Transfer Ratio IC = 50 mA dc, VCE = 5.