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JANHCCR2N3019 - NPN Low Power Silicon Transistor

Download the JANHCCR2N3019 datasheet PDF. This datasheet also covers the JANHCC2N3019 variant, as both devices belong to the same npn low power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Qualified to MIL-PRF-19500/391.
  • Lightweight & Low Power.
  • Ideal for Space, Military, & Other High Reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JANHCC2N3019-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JANHCCR2N3019
Manufacturer VPT
File Size 324.22 KB
Description NPN Low Power Silicon Transistor
Datasheet download datasheet JANHCCR2N3019 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
JANHCC2N3019, JANHCCR2N3019 JANKCC2N3019, JANKCCR2N3019 NPN Low Power Silicon Transistor Die Features • Qualified to MIL-PRF-19500/391 • Lightweight & Low Power • Ideal for Space, Military, & Other High Reliability Applications Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Forward Current Transfer Ratio Test Conditions IC = 30 mA VCB = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 500 mA dc VCE = 10 V dc; IC = 1 A dc Symbol Units Min.