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JANHCC2N3019 - NPN Low Power Silicon Transistor

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Qualified to MIL-PRF-19500/391.
  • Lightweight & Low Power.
  • Ideal for Space, Military, & Other High Reliability.

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Datasheet Details

Part number JANHCC2N3019
Manufacturer VPT
File Size 324.22 KB
Description NPN Low Power Silicon Transistor
Datasheet download datasheet JANHCC2N3019 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JANHCC2N3019, JANHCCR2N3019 JANKCC2N3019, JANKCCR2N3019 NPN Low Power Silicon Transistor Die Features • Qualified to MIL-PRF-19500/391 • Lightweight & Low Power • Ideal for Space, Military, & Other High Reliability Applications Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Forward Current Transfer Ratio Test Conditions IC = 30 mA VCB = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 500 mA dc VCE = 10 V dc; IC = 1 A dc Symbol Units Min.