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1N6492U4 - Silicon Schottky Barrier Diode

Download the 1N6492U4 datasheet PDF. This datasheet also covers the 1N6492 variant, as both devices belong to the same silicon schottky barrier diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

Key Features

  • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567.
  • Extremely Low Forward Voltage and Reverse Leakage.
  • Reverse Breakdown Voltage: 45 V.
  • Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4.
  • High Surge Capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N6492-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N6492U4
Manufacturer VPT
File Size 454.50 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet 1N6492U4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N6492, 1N6492U4 Silicon Schottky Barrier Diode Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/567 • Extremely Low Forward Voltage and Reverse Leakage • Reverse Breakdown Voltage: 45 V • Hermetically Sealed TO-39 package (TO-205AF) and Surface Mount U4 • High Surge Capability Description The 1N6492 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard TO-39 hermetically sealed metal can package as well as the surface mount U4. This rugged device is capable of reliable operation in all space, military, and industrial applications.