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VS150N08BT - N-Channel 80V MOSFET

Features

  • Trench power MOSFET.
  • Maximum 175 °C junction temperature.
  • Very low Qgd reduces power loss from passing through Vplateau.
  • 100 % Rg and UIS tested Top View S D G.

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Datasheet Details

Part number VS150N08BT
Manufacturer VBsemi
File Size 209.01 KB
Description N-Channel 80V MOSFET
Datasheet download datasheet VS150N08BT Datasheet

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Full PDF Text Transcription

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VS150N08BT-VB VS150N08BT-VB Datasheet N-Channel 80 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 80 0.0028 at VGS = 10 V 0.0030 at VGS = 7.5 V ID (A) 195 185 TO-220AB Qg (TYP.
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