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VBZM100N04
N-Channel 40-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V ID Configuration
40
V
2
mΩ
180
A
Single
TO-220AB
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Synchronous Rectification • Power Supplies
D
RoHS
COMPLIANT
G
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
VBZM100N04 Datasheet
