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VBZL80N06 - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S.

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Datasheet Details

Part number VBZL80N06
Manufacturer VBsemi
File Size 416.83 KB
Description N-Channel MOSFET
Datasheet download datasheet VBZL80N06 Datasheet
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VBZL80N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 60 V 6 mΩ 11 mΩ 100 A Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
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