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VBZA4946
www.VBsemi.com
Dual N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per leg
Configuration
SO-8 Dual D2 D2 5 D1 6 D1 7 8
60 0.032 0.040
6 Dual
FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested
D1
D2
G1
G2
4
3 G2 2 S2 1 G1 S1 Top View
S1
S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.
VBZA4946 Datasheet
