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VBRA1638
N-Channel 6 0-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V 60
0.036 at VGS = 4.5 V
ID (A) 8.0 6.5
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
GDS
TO-92
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
8.0
7.0
6.4
5.6
A
IDM
40
Avalanche Current
IAS
15
Single Pulse Avalanche Energy Maximum Power Dissipationa
EAS
11
mJ
TA = 25 °C TA = 70 °C
PD
3.3
1.7
2.3
1.
VBRA1638 Datasheet
