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VBP17R47S - MOSFET

Datasheet Summary

Features

  • Fast body diode MOSFET using E series technology.
  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM): Ron x Qg.
  • Low input capacitance (Ciss).
  • Low switching losses due to reduced Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number VBP17R47S
Manufacturer VBsemi
File Size 259.30 KB
Description MOSFET
Datasheet download datasheet VBP17R47S Datasheet
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Full PDF Text Transcription

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VBP17R47S www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 750 VGS = 10 V 278 46 76 Single 0.
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