Datasheet4U Logo Datasheet4U.com

VBP16I60 - 600V Trench and Fieldstop IGBT

Datasheet Summary

Features

  • Very Low VCEsat.
  • Low turn-off losses.
  • High speed switching.
  • Maximum junction temperature 175°C.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Datasheet preview – VBP16I60

Datasheet Details

Part number VBP16I60
Manufacturer VBsemi
File Size 2.19 MB
Description 600V Trench and Fieldstop IGBT
Datasheet download datasheet VBP16I60 Datasheet
Additional preview pages of the VBP16I60 datasheet.

📁 Similar Datasheet

  • VBP104FAS - Silicon PIN Photodiode (Vishay)
  • VBP104FASR - Silicon PIN Photodiode (Vishay)
  • VBP104S - Silicon PIN Photodiode (Vishay)
  • VBP104SR - Silicon PIN Photodiode (Vishay)
  • VBPW34FAS - Silicon PIN Photodiode (Vishay)
  • VBPW34FASR - Silicon PIN Photodiode (Vishay)
  • VBPW34S - Silicon PIN Photodiode (Vishay)
  • VBPW34SR - Silicon PIN Photodiode (Vishay)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBP16I60 600V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 600 120 (TC=25 ) 60 (TC=100 ) VCE sat (V) 1.
Published: |