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VBMB19R10S - N-Channel Power MOSFET

Download the VBMB19R10S datasheet PDF. This datasheet also covers the VBM19R10S variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VBM19R10S-VBsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VBMB19R10S
Manufacturer VBsemi
File Size 362.12 KB
Description N-Channel Power MOSFET
Datasheet download datasheet VBMB19R10S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VBM19R10S / VBMB19R10S / VBP19R10S www.VBsemi.com N-Channel 900V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 65 7 15 Single 0.