VBMB16R12 - N-Channel MOSFET

This page provides the datasheet information for the VBMB16R12, a member of the VBM16R12 N-Channel MOSFET family.

Datasheet Summary

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBsemi

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Datasheet Details

Part number	VBMB16R12
Manufacturer	VBsemi
File Size	334.87 KB
Description	N-Channel MOSFET
Datasheet	VBMB16R12 Datasheet
Additional preview pages of the VBMB16R12 datasheet.

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Full PDF Text Transcription

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VBM16R12 / VBMB16R12 www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 43 0.

Published: Oct 14, 2024 |