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VBM2611
P-Channel 60V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.012 at VGS = - 10 V 0.015 at VGS = - 4.5 V
TO-220AB
ID (A)c -80 -50
FEATURES • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • DC/DC Primary Switch
RoHS
COMPLIANT
S
G
Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)c
Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya
TC = 25 °C
ID
TC = 100 °C
IDM
IAS L = 0.
VBM2611 Datasheet
