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VBM2157N - P-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC TO-220 S G D P-Channel MOSFET.

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Datasheet preview – VBM2157N

Datasheet Details

Part number VBM2157N
Manufacturer VBsemi
File Size 552.13 KB
Description P-Channel MOSFET
Datasheet download datasheet VBM2157N Datasheet
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Full PDF Text Transcription

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VBM2157N P-Channel 150 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 150 0.065 0.070 - 40 Single FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC TO-220 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.
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