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VBM18R10S - N-Channel MOSFET

Datasheet Summary

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet preview – VBM18R10S

Datasheet Details

Part number VBM18R10S
Manufacturer VBsemi
File Size 365.81 KB
Description N-Channel MOSFET
Datasheet download datasheet VBM18R10S Datasheet
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Full PDF Text Transcription

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VBM18R10S / VBMB18R10S / VBP18R10S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 65 7 15 Single 0.
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