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VBM165R18 - N-Channel MOSFET

Datasheet Summary

Features

  • Reduced trr, Qrr, and IRRM.
  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Low switching losses due to reduced Qrr.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS) TO-220AB GDS D G S N-Channel MOSFET.

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Datasheet Details

Part number VBM165R18
Manufacturer VBsemi
File Size 292.70 KB
Description N-Channel MOSFET
Datasheet download datasheet VBM165R18 Datasheet
Additional preview pages of the VBM165R18 datasheet.

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Full PDF Text Transcription

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VBM165R18 N-Channel 650 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 106 14 33 Single 0.
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