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VBJ1695IN
N-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.076 at VGS = 10 V 60
0.085 at VGS = 4.5 V
ID (A)a 4.5 3.5
Qg (Typ.) 10 nC
FEATURES • Halogen-free • TrenchFET® Power MOSFET
APPLICATIONS • Load Switches for Portable Devices
RoHS
COMPLIANT
SOT-223-3 D
S D G
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
60
V
VGS
± 20
TC = 25 °C
4.5
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
3.2 a 2.7
TA = 70 °C
2.3
A
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
3.2 2.1b, c
TC = 25 °C
4.0
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
3.0 2.
VBJ1695IN Datasheet
