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VBGC1101M
N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.080 at VGS = 10 V 100
0.090 at VGS = 6 V
ID (A)d 4.5 4.0
Qg (Typ.) 4.6 nC
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested
APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV
D HVMDIP
S G
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Avalanche Current Single Avalanche Energy
L = 0.
VBGC1101M Datasheet
