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VBG3316 - Dual N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET.

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Datasheet Details

Part number VBG3316
Manufacturer VBsemi
File Size 215.44 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet VBG3316 Datasheet
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VBG3316 www.VBsemi.com Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.010 0.011 8 Dual FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested D2 D2 D1 D1 PDIP-8 G2 S2 G1 S1 D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
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