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VBFB2610N
P-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
0.066 at VGS = - 10 V
0.080 at VGS = - 4.5 V
TO-251
ID (A)a - 20 - 18
Qg (Typ.) 40 nC
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch
S
G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
VBFB2610N Datasheet
