Datasheet4U Logo Datasheet4U.com

VBE2658 - P-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Datasheet preview – VBE2658

Datasheet Details

Part number VBE2658
Manufacturer VBsemi
File Size 230.61 KB
Description P-Channel MOSFET
Datasheet download datasheet VBE2658 Datasheet
Additional preview pages of the VBE2658 datasheet.

📁 Similar Datasheet

  • VBE26-06NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE26-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE20 - Single Phase Rectifier Bridge (IXYS)
  • VBE100-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE17-06NO7 - Single Phase Rectifier Bridge (IXYS)
  • VBE17-12NO7 - Single Phase Rectifier Bridge (IXYS)
  • VBE55-06NO7 - High Performance Fast Recovery Diode (IXYS Corporation)
  • VBE55-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE60-06A - High Performance Fast Recovery Diode (IXYS)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBE2658 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.046 at VGS = - 10 V 0.058 at VGS = - 4.
Published: |