Datasheet4U Logo Datasheet4U.com

VBE2412 - P-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested TO-252 S G GDS Top View D P-Channel MOSFET.

📥 Download Datasheet

Datasheet preview – VBE2412

Datasheet Details

Part number VBE2412
Manufacturer VBsemi
File Size 295.09 KB
Description P-Channel MOSFET
Datasheet download datasheet VBE2412 Datasheet
Additional preview pages of the VBE2412 datasheet.

📁 Similar Datasheet

  • VBE20 - Single Phase Rectifier Bridge (IXYS)
  • VBE26-06NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE26-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE100-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE17-06NO7 - Single Phase Rectifier Bridge (IXYS)
  • VBE17-12NO7 - Single Phase Rectifier Bridge (IXYS)
  • VBE55-06NO7 - High Performance Fast Recovery Diode (IXYS Corporation)
  • VBE55-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE60-06A - High Performance Fast Recovery Diode (IXYS)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBE2412 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration -40 0.012 0.015 -50 Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C a TC = 125 °C L = 0.
Published: |