VBE2205M
FEATURES
- Dynamic d V/dt rating
- Repetitive avalanche rated
- P-channel
- Fast switching
- Ease of paralleling
- Simple drive requirements
.VBsemi.
Available Available
TO-252
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor
VGS at -10 V
TC = 25 °C TC = 100 °C
Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c
TC = 25 °C
EAS IAR EAR PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 8.7 m H, Rg = 25 , IAS = -11 A (see fig. 12). c. ISD -11 A, d...
