Datasheet4U Logo Datasheet4U.com

VBE17R04 - Power MOSFET

Datasheet Summary

Features

  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

📥 Download Datasheet

Datasheet preview – VBE17R04

Datasheet Details

Part number VBE17R04
Manufacturer VBsemi
File Size 304.21 KB
Description Power MOSFET
Datasheet download datasheet VBE17R04 Datasheet
Additional preview pages of the VBE17R04 datasheet.

📁 Similar Datasheet

  • VBE17-06NO7 - Single Phase Rectifier Bridge (IXYS)
  • VBE17-12NO7 - Single Phase Rectifier Bridge (IXYS)
  • VBE100-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE20 - Single Phase Rectifier Bridge (IXYS)
  • VBE26-06NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE26-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE55-06NO7 - High Performance Fast Recovery Diode (IXYS Corporation)
  • VBE55-12NO7 - High Performance Fast Recovery Diode (IXYS)
  • VBE60-06A - High Performance Fast Recovery Diode (IXYS)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBE17R04 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 2.
Published: |