VBE17R04
FEATURES
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic d V/dt Ruggedness
Available
Ro HS-
PLIANT
- Fully Characterized Capacitance and Avalanche Voltage and Current
- pliant to Ro HS directive 2002/95/EC
TO-252
GDS Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc
TC = 25 °C
EAS IAR EAR PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b....
