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VBE1203M - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • PWM Optimized.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number VBE1203M
Manufacturer VBsemi
File Size 286.92 KB
Description N-Channel MOSFET
Datasheet download datasheet VBE1203M Datasheet
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Full PDF Text Transcription

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VBE1203M N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D TO-252 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.
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