VBE1106N
FEATURES
- Trench FET® power MOSFET
- 100 % UIS tested
TO-252
APPLICATIONS
- Primary side switch
.VBsemi.
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT 100 ± 20 25 20 12 b, c 10 b, c 75 50 e
6.9 b, c 33 55 83 58
8.3 b, c 5.8 b, c -55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
Maximum Junction-to-Ambient b, d Maximum Junction-to-Case t ≤ 10 s
Rth JA
Steady State
Rth...
