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VB7101M
N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.095 at VGS = 10 V 100
0.105 at VGS = 4.5 V
ID (A)a, e 3.2 3.0
Qg (Typ.) 4.2 nC
TSOP-6
D1 D2 G3
6D 5D 4S
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • DC/DC Converters, High Speed Switching
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
VDS
VGS
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
100
± 20 3.2e 2.8 e 3.0b, c 2.
VB7101M Datasheet
