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SUM45N25-58-E3 - N-Channel MOSFET

Features

  • TrenchFET® Power.

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SUM45N25-58-E3-VB SUM45N25-58-E3-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 250 RDS(on) () 0.040 at VGS = 10 V 0.045 at VGS = 6 V ID (A) 60 55 Qg (Typ) 95 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial RoHS COMPLIANT D D2PAK (TO-263) GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.
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