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STB200NF03T4-VB
STB200NF03T4-VB Datasheet
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.0023 at VGS = 10 V 0.0032 at VGS = 4.5 V
ID (A) 150 120
Qg (Typ) 82 nC D
D2PAK (TO-263)
G
FEATURES • Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing • Server • DC/DC
G D S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
150
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
120 35.8b, c
A
TA = 70 °C
27b, c
Pulsed Drain Current
IDM
500
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS
39
L = 0.1 mH
EAS
94.
STB200NF03T4 Datasheet
