STB200NF03T4
FEATURES
- Trench Power MOSFET
- 100 % Rg and UIS Tested
- pliant to Ro HS Directive 2011/65/EU
APPLICATIONS
- OR-ing
- Server
- DC/DC
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
± 20
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
120 35.8b, c
TA = 70 °C
27b, c
Pulsed Drain Current
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.1 m H
94.8 m J
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
90a, e 3.13b,...
