SSPS924NE
FEATURES
- Trench power MOSFET
APPLICATIONS
- DC/DC
- Notebook system power
- POL
D1
D2
G1
G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Remendations (Peak Temperature) c, d
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT 20 ±8 25 23.8
10 a, b 8 a, b 40 19 2.2 a, b 15 11 23 14.8 2.6 a, b 1.7 a, b -55 to +150 260
UNIT V
A m J W °C
THERMAL RESISTANCE RATINGS
PARAMETER...
