• Part: SSM3J36FS
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 282.13 KB
Download SSM3J36FS Datasheet PDF
VBsemi
SSM3J36FS
FEATURES - Trench FET® power MOSFET - 100 % R tested - Fast switching speed APPLICATIONS - Load / power switch for portable devices - Drivers: relays, solenoids, displays - Battery operated systems D P-Channel MOSFET G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -20 ± 12 -0.55 b, c -0.45 b, c -1.8 -0.16 b, c 0.19 b, c 0.12 b, c -55 to +150 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, b t≤5s Steady State Notes a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. SYMBOL Rth...