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SI7923DN-VB
SI7923DN-VB Datasheet Dual P-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.038 at VGS = - 10 V
0.060 at VGS = - 4.5 V
ID (A) - 6.4 -5
DFN 3x3 EP
3.30 mm
S1 1
G1 2
3.30 mm
S2
3
G2
4
D1
8
D1
7
D2
6
D2
5
Bottom View
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• Trench Power MOSFET
• New Low Thermal Resistance Power Package
APPLICATIONS
• Portable - Battery Switch - Load Switch
S1
S2
G1
G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 85 °C
ID
- 6.