• Part: SI4850DY-T1
  • Description: N-Channel 60V MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 219.47 KB
Download SI4850DY-T1 Datasheet PDF
VBsemi
SI4850DY-T1
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench Power MOSFET - Optimized for “Low Side” Synchronous Rectifier Operation - 100 % Rg and UIS Tested APPLICATIONS - CCFL Inverter ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 m H IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit 60 ± 20 7.6a 6.8 6.1b, c 4.8b, c 25 4.2 2.1b, c 15 11.2 5 3.2 2.5b, c 1.6b, c - 55 to 150 THERMAL RESISTANCE...