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SI2300DS-T1-GE3 - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription for SI2300DS-T1-GE3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SI2300DS-T1-GE3. For precise diagrams, and layout, please refer to the original PDF.

SI2300DS-T1-GE3 www.VBsemi.com SI2300DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.050 at VGS =...

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DS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.050 at VGS = 1.8 V ID (A)e 6a 6a 5.6 Qg (Typ.) 8.

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